of 3 1 features a a b c d do-15 dim min max a 25.40 b 5.50 7.62 c 0.686 0.889 d 2.60 3.60 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified mechanical data glass passivated junction hermetically sealed package low reverse current high surge current loading case: molded plastic parameter test conditions type symbol value unit reverse voltage byx82 v r =v rrm 200 v g =repetitive peak reverse voltage BYX83 v r =v rrm 400 v byx84 v r =v rrm 600 v byx85 v r =v rrm 800 v byx86 v r =v rrm 1000 v peak forward surge current t p =10ms, half sinewave i fsm 50 a repetitive peak forward current i frm 10 a average forward current t amb 45 c i fav 2 a i 2 *trating i 2 *t 8 a 2 *s junction and storage temperature range t j =t stg 65...+175 c parameter test conditions type symbol min typ max unit forward voltage i f =1a v f 0.9 1.0 v reverse current v r =v rrm i r 0.1 1 a v r =v rrm , t j =100 c i r 10 25 a diode capacitance v r =4v, f=0.47mhz c d 20 pf reverse recovery time i f =0.5a, i r =1a, i r =0.25a t rr 2 4 s reverse recovery charge i f =i r =1a, di/dt=5a/ s q rr 3 6 c byx82-byx86 2.0a axial leaded silicon mesa rectifiers
characteristics (t j = 25 c unless otherwise specified) 0 0 20 40 60 80 120 r therm. resist. junction / ambient ( k/w ) thja l lead length ( mm ) 94 9572 51015 25 30 20 100 ll t l =constant figure 1. max. thermal resistance vs. lead length 0 400 800 1200 0 t junction temperature ( c ) j reverse / repetitive peak reverse voltage ( v ) 1600 94 9579 40 80 120 160 240 200 byx 85 byx 86 byx 84 byx 82 byx 83 v r v rrm r thja 35k/w r thja 57k/w r thja 100k/w figure 2. junction temperature vs. reverse/repetitive peak reverse voltage 0 0.6 1.2 1.8 2.4 0.01 0.1 1 10 3.0 94 9573 i forward current ( a ) f v f forward voltage ( v ) scattering limits t j =25 c t j =175 c figure 3. forward current vs. forward voltage 0 6 12 18 24 30 0.1 1 10 c diode capacitance ( pf ) d v r reverse voltage ( v ) 100 94 9574 f = 470khz t j =25 c figure 4. typ. diode capacitance vs. reverse voltage 1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( s ) 94 9575 10 3 10 2 10 1 10 0 10 1 10 0 10 1 10 2 i frm repetitive peak forward current ( a ) t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 0.02 0.01 t amb =25 c t amb =45 c t amb =70 c t amb = 100 c single pulse t amb = 125 c t amb = 150 c v rrm 200v r thja 100k/w figure 5. thermal response 2of3
1 10 100 1000 z thermal resistance for pulse cond. (k/w) thp t p pulse length ( s ) 94 9578 i frm repetitive peak forward current ( a ) 10 3 10 2 10 1 10 0 10 1 10 1 10 0 10 1 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 0.02 0.01 t amb =25 c t amb =45 c t amb =60 c t amb = 100 c single pulse v rrm 1000v t 10 s r thja 100k/w t amb =70 c figure 6. thermal response 3of3
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